Polymer 4D printing: Advanced shape-change and beyond

4D printing is an exciting branch of additive manufacturing. It relies on established 3D printing techniques to fabricate objects in much the same way. However, structures which fall into the 4D printed category have the ability to change with time, hence the “extra dimension.” The common perception of 4D printed objects is that of macroscopic single-material structures limited to point-to-point shape change only, in response to either heat or water. However, in the area of polymer 4D printing, recent advancements challenge this understanding. A host of new polymeric materials have been designed which display a variety of wonderful effects brought about by unconventional stimuli, and advanced additive manufacturing techniques have been developed to accommodate them. As a result, the horizons of polymer 4D printing have been broadened beyond what was initially thought possible. In this review, we showcase the many studies which evolve the very definition of polymer 4D printing, and reveal emerging areas of research integral to its advancement.     

Functional Groups Assisted Tunable Dielectric Permittivity of Guest-Free Zn-Based Coordination Polymers for Gate Dielectrics

The dielectric properties of coordination polymers has been a topic of recent interest, but the role of different functional groups on the dielectric properties of these polymers has not yet been fully addressed. Herein, the effects of electron-donating (R=NH₂) and electron-withdrawing (R=NO₂) groups on the dielectric behavior of such materials were investigated for two thermally stable and guest-free Zn-based coordination polymers, [Zn(L₁)(L₂)]_n ( 1 ) and [Zn(L₁)(L₃)]_n ( 2 ) [L₁=2-(2-pyridyl) benzimidazole (Pbim), L₂=5-aminoisophthalate (Aip), and L₃=5-nitroisophthalate (Nip)]. The results of dielectric studies of 1 revealed that it possesses a high dielectric constant (κ=65.5 at 1 kHz), while compound 2 displayed an even higher dielectric constant (κ=110.3 at 1 kHz). The electron donating and withdrawing effects of the NH₂ and NO₂ substituents induce changes in the polarity of the polymers, which is due to the inductive effect from the aryl ring for both NO₂ and NH₂. Theoretical results from density functional theory (DFT) calculations, which also support the experimental findings, show that both compounds have a distinct electronic behavior with diverse wide bandgaps. The significance of the current work is to provide information about the structure-dielectric property relationships. So, this study promises to pave the way for further research on the effects of different functional groups on coordination polymers on their dielectric properties.     

A Photoluminescent Ag10Cu6 Cluster Stablized by a PNNP Ligand and Phenylacetylides Selectively and Reversibly Senses Ammonia in Air and Water

A photoluminescent bimetallic cluster [Ag₁₀Cu₆(bdppthi)₂(C≡CPh)₁₂(MeOH)₂(H₂O)](ClO₄)₄ ( 1 , bdppthi=N,N’-bis(diphenylphosphanylmethyl)-tetrahydroimidazole} was synthesized from the PNNP type ligand bdppthi generated in-situ. Upon excitation at 365 nm, 1 exhibited strong phosphorescent emission at 630 nm, which was selectively quenched by NH₃ in air or water. The sensing of NH₃ was rapid and recoverable, with detection limits of 53 ppm (v/v) in N₂ and 21 μmol/L (0.36 ppm, w/w) for NH₃ ⋅ H₂O in water. Cluster 1 could potentially serve as a bifunctional chemical sensor for the efficient detection of ammonia in waste-gas and waste-water.     

用标准件对梯度磁场定标

就标准厚度卡片在霍尔传感器的定标方面的应用作了有益的探讨。在纵向测量微小长度时,霍尔片处于磁场边缘位置,其对磁场的梯度更大,即灵敏度更高,且靠中心位置的线性更好。     

Sensitivity improvement of aluminum-based far-ultraviolet nearly guided-wave surface plasmon resonance sensor

An aluminum (Al) based nearly guided-wave surface plasmon resonance (NGWSPR) sensor is investigated in the far-ultraviolet (FUV) region. By simultaneously optimizing the thickness of Al and dielectric films, the sensitivity of the optimized Al-based FUV-NGWSPR sensor increases from 183°/RIU to 309°/RIU, and its figure of merit rises from 26.47 RIU^-1 to 32.59 RIU^-1 when the refractive index of dielectric increases from 2 to 5. Compared with a traditional FUV-SPR sensor without dielectric, the optimized FUV-NGWSPR sensor can realize simultaneous improvement of sensitivity and figure of merit. In addition, the FUV-NGWSPR sensor with realistic materials (diamond, Ta₂O₅, and GaN) is also investigated, and 137.84%, 52.70%, and 41.89% sensitivity improvements are achieved respectively. This work proposes a method for performance improvement of FUV-SPR sensors by exciting nearly guided-wave, and could be helpful for the high-performance SPR sensor in the short-wavelength region.     

光寻址电位传感器的正交相位检波检测方法

光寻址电位传感器的幅度检测方法易受噪声干扰,灵敏度差,信噪比和精度低,且受调制光源的影响较大,影响检测结果的准确性.为此提出了一种基于正交相位检波的光寻址电位传感器检测方法.该方法是将光寻址电位传感器的输出光电流信号分别与两路正交信号相乘,通过低通滤波提取直流分量并相除,即可得到光寻址电位传感器的输出信号相位信息.与已有的光寻址电位传感器相位检测方法相比,该方法具有算法复杂度低、实时性高的优点.实验研究了调制光源光强对光寻址电位传感器幅度检测和相位检测的影响,对比分析了光寻址电位传感器的传统幅度检测方法与正交相位检波检测方法对pH检测的灵敏度、线性度及信噪比.结果表明,相比于幅度检测方法,调制光源光强对光寻址电位传感器的相位检测影响更小,在频率为10 kHz,pH的范围为1.68~10.01的情况下,相位检测方法比幅度检测方法测得的灵敏度增加了7 mV/pH,精度提高了14.9 mpH,非线性误差减小了0.003%,均方差减少了0.1051×10^-5,信噪比增加了8.2827 dB.该方法特别适用于弱光下的光寻址电位传感器检测.     

Evaluation of Charged Defect Energy in Two-Dimensional Semiconductors for Nanoelectronics: The WLZ Extrapolation Method

Defects play a central role in controlling the electronic properties of two-dimensional (2D) materials and realizing the industrialization of 2D electronics. However, the evaluation of charged defects in 2D materials within first-principles calculation is very challenging and has triggered a recent development of the WLZ (Wang, Li, Zhang) extrapolation method. This method lays the foundation of the theoretical evaluation of energies of charged defects in 2D materials within the first-principles framework. Herein, the vital role of defects for advancing 2D electronics is discussed, followed by an introduction of the fundamentals of the WLZ extrapolation method. The ionization energies (IEs) obtained by this method for defects in various 2D semiconductors are then reviewed and summarized. Finally, the unique defect physics in 2D dimensions including the dielectric environment effects, defect ionization process, and carrier transport mechanism captured with the WLZ extrapolation method are presented. As an efficient and reasonable evaluation of charged defects in 2D materials for nanoelectronics and other emerging applications, this work can be of benefit to the community.     

Voltammetric Determination of Isoniazid Drug in Various Matrix by Using CuOx Decorated MW‐CNT Modified Glassy Carbon Electrode

Copper oxide decorated multi‐walled carbon nanotube (MWCNT) modified glassy carbon electrode (GCE) was prepared for determination of isoniazid (INZ) in various matrices. The electrochemical behavior of INZ was tested with the aid of Cyclic Voltammetry (CV) and quantitative experiments were performed by using Linear Sweep Voltammetry (LSV). Morphological and structural characterization of the modified electrode was performed by utilizing Scanning Electron Microscopy (SEM), X‐Ray Photoelectron Spectroscopy (XPS) while electrochemical characterization was performed by using CV and Electrochemical Impedance spectroscopy (EIS). The proposed sensor exhibited well defined anodic peak at 0.30 V for INZ at pH 6.0 medium. Under the optimum conditions, a linear relation between INZ concentration and peak current was observed in the range of 2.0×10^?7 to 5.0×10^?5 M. Limit of detection was calculated as 1.0×10^?8 M and repeatability and accuracy was found as 5.60 % and 91.0 % for 5.0 10^?7 M INZ by using 3 successive measurement, respectively. Then, the analytic performance of the electrode developed was tested by analyzing commercial tablets, artificial human serum and urine samples. The results indicated that satisfactory recoveries was observed for all issue.     

油-气-水三相流超声传感器持气率测量*

为探索油-气-水三相流持气率测量难题,该文开展了脉冲透射式超声传感器持气率测量动态实验研究。首先,利用超声传感器与光纤传感器组合,测取了油-气-水三相流中段塞流、混状流、泡状流的响应信号;其次,提取了超声脉冲信号的最大值序列来反映不同流型时超声传感器响应特性,同时,借助双头光纤传感器与相关测速法,计算得到了流体中气泡弦长序列;最后,结合流型与泡径信息,利用超声传感器测量了不同流型下持气率,并分析了不同流型持气率预测的误差来源,为其他油-气-水三相流持气率测量传感器设计提供了借鉴。     

CoFeSiB非晶丝弱磁场测量仪的研制

设计了以Co基非晶丝为敏感元件的传感器探头,多谐振荡励磁电路,信号处理电路,单片机显示电路,且对该磁场测量仪进行了标定。